RS3A - RS3K
PRV : 50 - 800 Volts
Io : 3.0 Amperes
FEATURES :
* For surface mount applications
* Low profile package
* Built-in stran relief,
ideal for automated placement
* Fast switching for high efficiency
* Glass passivated chip junction
* High temperature soldering :
250
°C/10
seconds at terminals
* Pb / RoHS Free
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
SMC (DO-214AB)
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.280(7.11)
0.260(6.60)
0.008(0.203)
0.004(0.102)
0.121(3.07)
0.115(2.92)
0.245(6.22)
0.220(5.59)
0.103(2.62)
0.079(2.00)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMC Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.21 gram
Dimensions in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
L
= 55
°C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method) T
L
= 75
°C
Maximum Instantaneous Forward Voltage at I
F
= 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
A
= 25
°C
T
A
= 125
°C
SYMBOL RS3A RS3B RS3D RS3G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
R
θJA
R
θJL
T
J
, T
STG
150
60
50
15
- 55 to + 150
50
35
50
100
70
100
200
140
200
3.0
100
1.3
10
250
400
280
400
RS3J
600
420
600
RS3K
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
250
500
ns
pF
°C/W
°C/W
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical thermal resistance ( Junction to Ambient ) ( Note 3 )
Typical thermal resistance ( Junction to Lead ) ( Note 3 )
Operating Junction and StorageTemperature Range
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
( 3 ) On P.C.B with 0.3 x 0.3" (8.0 x 8.0 mm ) copper pad areas.
Page 1 of 2
Rev. 01 : September 30, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
