SD103A - SD103C
FEATURES :
• For general purpose applications
• The SD103 series is a Metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
SD103A
Repetitive Peak Reverse Voltage
SD103B
SD103C
Single Cycle Surge 60 Hz Sine Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
Value
40
30
20
Unit
V
I
FSM
P
D
R
θ
JA
T
J
T
S
15
400
(1)
0.3
(1)
(1)
A
mW
°C/mW
°C
°C
125
-55 to + 150
(1)
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
SD103A
SD103B
SD103C
Symbol
I
R
Test Condition
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20mA
I
F
= 200mA
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 50mA to 200mA
recover to 0.1I
R
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
50
10
Max
5
5
5
0.37
0.6
-
-
Unit
µA
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
V
F
Ctot
Trr
V
pF
ns
Page 1 of 2
Rev. 02 : March 24, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
