Certificate TH97/10561QM
Certificate TW00/17276EM
SD103AWS - SD103CWS
FEATURES :
* For general purpose applications
* The SD103 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
* Pb / RoHS Free
SCHOTTKY BARRIER DIODES
SOD-323
0.40
0.15 (max)
2.80
2.30
0.25
1.80
1.60
1.35
1.10
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* SD103AWS Marking Code : S4
* SD103BWS Marking Code : S5
* SD103CWS Marking Code : S6
0.80
1.15
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave
Power Dissipation (Infinite Heat Sink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
(T
C
= 25
°
C unless otherwise noted)
Symbol
SD103AWS
SD103BWS
SD103CWS
V
RRM
I
FSM
P
tot
R
θ
JA
T
J
T
STG
Value
40
30
20
2
150
650
(1)
125
(1)
-55 to + 150
(1)
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics
Parameter
Reverse Current
(T
J
= 25°C unless otherwise noted)
Symbol
SD103AWS
SD103BWS
SD103CWS
I
R
Test Condition
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20mA
I
F
= 200mA
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 50mA to 200mA
recover to 0.1I
R
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
50
10
Max
5
5
5
0.37
0.60
-
-
Unit
μA
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
Note:
V
F
Ctot
Trr
V
pF
ns
(1) Valid provided that electrodes are kept at ambient temperature.
Page 1 of 2
Rev. 01 : May 4, 2006
EIC [ EIC DISCRETE SEMICONDUCTORS ]
