TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
US1A - US1M
PRV : 50 ~ 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
SURFACE MOUNT
ULTRA FAST RECTIFIERS
SMA
1.3
±
0.2
5.3
±
0.35
4.2
±
0.25
2.3
±
0.2
1.6
±
0.25
2.6
±
0.15
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
1.6
±
0.25
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current
Maximum non-repetitive peak forward current
8.3ms Single half sine wave,
Maximum Instantaneous Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time
(1)
Typical Junction Capacitance
Junction Temperature Range
Storage Temperature Range
Notes :
(2)
SYMBOL US1A
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
C
J
T
J
T
STG
50
35
50
US1B
100
70
100
US1D US1G
200
140
200
400
280
400
1.0
30
US1J
600
420
600
US1K US1M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
1.1
10
50
50
15
- 65 to + 175
- 65 to + 175
1.7
V
μA
μA
Ta = 25
°C
Ta = 100
°C
75
10
ns
pF
°C
°C
(1) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 06 : September 23, 2008
EIC [ EIC DISCRETE SEMICONDUCTORS ]
