EL2006 EL2006A
High Gain Fast FET Input Op Amp
DC Electrical Characteristics
Contd
EL2006A
Parameter
V
OS
DV
OS
DT
A
VOL
Description
Offset Voltage
Offset Voltage Drift
Large Signal
Voltage Gain
T
J
e
25 C R
L
e
1 kX
V
OUT
e
g
10V
R
L
e
1 kX V
OUT
e
g
10V
74
74
Test Conditions
T
J
e
25 C
15
90
Min Typ Max
3
25
EL2006AC
Test
Test
Min Typ Max
Level
Level
I
I
I
I
74
74
15
90
3
25
I
I
II
III
Units
mV
mV
C
dB
dB
TD is 1 4in
TD is 2 9in
V
S
e
g
15V T
MIN
k
T
A
k
T
MAX
(Note These tests are in addition to those listed above )
AC Electrical Characteristics
V
S
e
g
15V
Parameter
t
r
Description
Rise Time
Test Conditions
R
L
e
1 kX T
J
e
25 C (See AC Test Circuits)
EL2006 EL2006A
Min Typ Max
18
12
350
450
90
160
250
500
55
7
40
20
13
2
15
15
EL2006C EL2006AC
Units
ns
ns
V
ms
ns
ns
ns
MHz
MHz
MHz
nV
0
Hz
ns
pF
Test
Test
Min Typ Max
Level
Level
V
I
I
V
V
V
V
I
V
V
I
V
55
350
18
12
450
90
160
250
500
7
40
20
13
2
15
15
V
I
I
V
V
V
V
I
V
V
I
V
A
V
e
10V V
OUT
e
1 V
P-P
A
V
e
1V V
OUT
e
1 V
P-P
SR
t
s
t
s
t
s
GBW
Slew Rate (Note 2)
Settling Time to 1 0%
Settling Time to 0 1%
Settling Time to 0 01%
A
V
e
1V V
OUT
e
20 V
P-P
A
V
e b
1V V
OUT
e
10 V
P-P
A
V
e b
1V V
OUT
e
10 V
P-P
A
V
e b
1V V
OUT
e
10 V
P-P
Gain Bandwidth Product A
V
t
20V
Pull Power
Bandwidth (Note 3)
Unity Gain Bandwidth
V
OUT
e
g
10V
C
A
e
8 pF C
B
e
100 pF
1 kHz to 1 MHz
A
V
e
1V
e
N
t
D
C
IN
Noise Voltage
Small Signal Delay
Input Capacitance
Note 1 T
J
e
25 C duty cycle
k
1% pulse width
k
10
ms
Note 2 Slew rate is measured at the 25% and 75% points
Note 3 The Full Power bandwidth is guaranteed by testing slew rate
EL2006 Recommended Compensation
(See Figure 1)
A
VOL
a
1
b
1 to
a
5
g
10
l g
20
C
A
5–8 pF
5 pF
5 pF
3 pF
C
B
100 pF
68 pF
10 pF
10 pF
R
S
a
2k
0
k
1k
k
1k
R
S
b
Open Circuit
k
1k
R
F
100
1k
l
10k
l
20k
1k
1k
Note Use a small capacitor of about 1 pF in parallel with R
F
to compensate for stray
input capacitance
2006 – 4
Figure 1
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
