EL2006 EL2006A
EL2006 EL2006A
High Gain Fast FET Input Op Amp
Features
90 dB open loop gain
450 V
ms
slew rate
40 MHz bandwidth
No thermal tail
3 mV max input offset voltage
Offset nulls with single pot
No compensation required for
gains above 50
Peak output current to 200 mA
Pin compatible with LH0032
80 dB common mode rejection
General Description
The EL2006 EL2006A are high slew rate wide bandwidth high
input impedance high gain and fully differential input opera-
tional amplifiers They exhibit excellent open loop gain charac-
teristics making them suitable for a broad range of high speed
signal processing applications These patented devices have
open loop gains in excess of 86 dB making the EL2006
EL2006A ideal choices for current mode video bandwidth digi-
tal to analog converters of 10 bits or higher resolution The
EL2006’s FET input structure high slew rate and high output
drive capability allow use in applications such as buffers for
flash converter inputs In general the EL2006 EL2006A allow
the user to take relatively high closed loop gains without com-
promising gain accuracy or bandwidth
The EL2006 EL2006A are pin compatible with the popular in-
dustry standard ELH0032 ELH0032A offering comparable
bandwidth and slew rate while offering significant improve-
ments in open loop gain common mode rejection and power
supply rejection
Elantec facilities comply with MIL-I-45208A and are
MIL-STD-1772 certified Elantec’s Military devices comply
with MIL-STD-883 Class B Revision C and are manufactured
in our rigidly controlled ultra-clean facilities in Milpitas Cali-
fornia For additional information on Elantec’s Quality and Re-
liability Assurance Policy and procedures request brochure
QRA-1
Ordering Information
Part No
EL2006CG
EL2006G
EL2006G 883B
EL2006ACG
EL2006AG
EL2006AG 883G
Temp Range
b
25 C to
a
85 C
b
55 C to
a
125 C
b
55 C to
a
125 C
b
25 C to
a
85 C
b
55 C to
a
125 C
b
55 C to
a
125 C
Pkg
TO-8
TO-8
TO-8
TO-8
TO-8
TO-8
Outline
MDP0002
MDP0002
MDP0002
MDP0002
MDP0002
MDP0002
Connection Diagrams
Simplified Schematic
2006 – 1
Top View
November 1993 Rev F
2006 – 3
Manufactured under U S Patent No 4 746 877
Note
All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
1989 Elantec Inc
ELANTEC [ ELANTEC SEMICONDUCTOR ]
