EL2125C - Preliminary
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Electrical Characteristics
V
S
= ±15V, T
A
= 25°C, R
F
= 180Ω, R
G
= 20Ω, R
L
= 500Ω unless otherwise specified.
Parameter
DC Performance
V
OS
T
CVOS
I
B
I
OS
T
CIB
C
IN
A
VOL
PSRR
CMRR
CMIR
V
OUT
V
OUTL
I
OUT
I
S
BW
BW ±0.1dB
BW ±1dB
Peaking
SR
OS
T
S
V
N
I
N
HD2
HD3
THD
IMD
1.
2.
3.
4.
5.
6.
Input Offset Voltage (SO8 & PDIP8)
Input Offset Voltage (SOT23-5)
Offset Voltage Temperature Coefficient
Input Bias Current
Input Bias Current Offset
Input Bias Current Temperature Coefficient
Input Capacitance
Open Loop Gain
Power Supply Rejection Ratio
Common Mode Input Range
Output Voltage Swing
Output Voltage Swing
Output Short Circuit Current
Supply Current
-3dB Bandwidth
±0.1dB Bandwidth
±1dB Bandwidth
Peaking
Slew Rate
Overshoot, 4Vpk-pk Output Square Wave
Settling Time to 0.1% of ±1V Pulse
Voltage Noise Spectral Density
Current Noise Spectral Density
2nd Harmonic Distortion
3rd Harmonic Distortion
[4]
[4]
[5]
[6]
[3]
[1]
[2]
Description
Conditions
Min
Typ
-0.2
TBD
Max
2
3
Unit
mV
mV
µV/°C
µA
-30
-21
0.16
TBD
2.2
1
µA
nA/°C
pF
dB
dB
dB
V
V
V
V
75
75
75
TBD
No load, R
F
= 1kΩ
Positive, R
F
= 180Ω, R
L
= 500Ω
Negative
12.1
-11.3
100
86
95
100
13.5
Common Mode Rejection Ratio
150
10.8
220
23
63
2.5
12
mA
mA
MHz
MHz
MHz
dB
V/µs
%
ns
nV/√Hz
pA/√Hz
dBc
dBc
dBc
%
AC Performance - R
G
= 20Ω, C
L
= 5pF
V
OUT
= 2V
PP
, measured at 20% to 80%
TBD
225
0.6
TBD
0.95
2.1
TBD
TBD
TBD
TBD
Total Harmonic Distortion
Intermodulation Distortion
Measured by moving the supplies from ±13.5V to ±16.5V
Measured by moving the inputs from +13.5V to -14.4V
Pulse test only
Frequency = 10MHz, V
OUT
= 1Vpk-pk, into 100Ω and 5pF load
Frequency = 20MHz, V
OUT
= -20dBm (0.0274V
RMS
) into 500Ω and 15pF load
Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
LOAD
= 500Ω and 15pF
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
