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EL7464CRE-T13 参数 Datasheet PDF下载

EL7464CRE-T13图片预览
型号: EL7464CRE-T13
PDF下载: 下载PDF文件 查看货源
内容描述: 单片4安培直流: DC降压稳压器 [Monolithic 4 Amp DC:DC Step-down Regulator]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管局域网
文件页数/大小: 18 页 / 1195 K
品牌: ELANTEC [ ELANTEC SEMICONDUCTOR ]
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EL7564C
EL7564C
Monolithic 4 Amp DC:DC Step-down Regulator
Absolute Maximum Ratings
(T
Supply Voltage between V
IN
or V
DD
and GND
V
LX
Voltage
Input Voltage
V
HI
Voltage
A
= 25°C)
+6V
V
IN
+0.3V
GND -0.3V, V
DD
+0.3V
GND -0.3V, V
LX
+6V
Storage Temperature
Operating Ambient Temperature
Operating Junction Temperature
-65°C to +150°C
-40°C to +85°C
+135°C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
.
DC Characteristics
V
DD
= V
IN
= 5V, T
A
= T
J
= 25
°
C, C
OSC
= 1.2nF, unless otherwise specified.
Parameter
V
REF
V
REFTC
V
REFLOAD
V
RAMP
I
OSC_CHG
I
OSC_DIS
I
VDD
+V
DRV
I
VDD_OFF
V
DD_OFF
V
DD_ON
T
OT
T
HYS
I
LEAK
I
LMAX
R
DSON
R
DSONTC
I
STP
I
STN
V
PGP
V
PGN
V
PG_HI
V
PG_LO
V
OVP
V
FB
V
FB_LINE
V
FB_LOAD
V
FB_TC
I
FB
V
EN_HI
V
EN_LO
I
EN
Description
Reference Accuracy
Reference Temperature Coefficient
Reference Load Regulation
Oscillator Ramp Amplitude
Oscillator Charge Current
Oscillator Discharge Current
V
DD
+V
DRV
Supply Current
V
DD
Standby Current
V
DD
for Shutdown
V
DD
for Startup
Over Temperature Threshold
Over Temperature Hysteresis
Internal FET Leakage Current
Peak Current Limit
FET On Resistance
R
DSON
Tempco
Auxilliary Supply Tracking Positive Input
Pull Down Current
Auxilliary Supply Tracking Negative Input
Pull Up Current
Positive Power Good Threshold
Negative Power Good Threshold
Power Good Drive High
Power Good Drive Low
Over Voltage Protection
Output Initial Accuracy
Output Line Regulation
Output Load Regulation
Output Temperature Stability
Feedback Input Pull Up Current
EN Input High Level
EN Input Low Level
Enable Pull Up Current
V
EN
= 0
1
-4
-2.5
I
LOAD
= 0A
V
IN
= 5V,
∆V
IN
= 10%, I
LOAD
= 0A
0.5A< I
LOAD
<4A
-40°C < T
A
<85°C, I
LOAD
= 2A
V
FB
= 0V
0.960
V
STP
= V
IN
/2
V
STN
= V
IN
/2
With respect to target output voltage
With respect to target output voltage
I
PG
= 1mA
I
PG
= -1mA
10
0.975
0.5
0.5
±1
100
3.2
200
4
0.99
6
-14
4
0.5
-4
Wafer level test only
EN = 0, L
X
= 5V (low FET), L
X
= 0V (high FET)
5
30
0.2
2.5
2.5
4
14
-6
60
0.1V<V
OSC
<1.25V
0.1V<V
OSC
<1.25V
V
EN
= 4V, F
OSC
= 120kHz
EN = 0
3.5
4
135
20
10
2
0<I
REF
<50µA
-1
1.15
200
8
3.5
1
5
1.5
3.9
4.35
Conditions
Min
1.24
Typ
1.26
50
Max
1.28
Unit
V
ppm/°C
%
V
µA
mA
mA
mA
V
V
°C
°C
µA
A
mΩ
mΩ/°C
µA
µA
%
%
V
V
%
V
%
%
%
nA
V
V
µA
2