Single N-channel MOSFET
ELM13434CA-S
■General description
The ELM13434CA-S uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
■Features
•
•
•
•
•
Vds=30V
Id=4.2A (Vgs=10V)
Rds(on) < 52mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
1.40
0.90
-55 to 150
4.2
3.3
30
1.00
0.64
Limit
10sec
Steady-state
30
±20
3.5
2.8
Unit
V
V
A
A
W
°C
1, 6
2
Note
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
Typ.
70
100
63
Max.
90
125
80
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
S
G
1
2
3
4- 1