Single N-channel MOSFET
ELM13410CA-S
■General description
ELM13410CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V.
■Features
•
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•
•
•
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Vds=30V
Id=5.8A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 33mΩ (Vgs=4.5V)
Rds(on) < 52mΩ (Vgs=2.5V)
Rds(on) < 70mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±
12
Unit
V
V
A
A
W
°C
Note
5.8
4.9
30
1.4
1.0
-55 to 150
1
2
1
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
Typ.
65
85
43
Max.
90
125
60
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
G
S
1
2
3
4- 1
ELM-TECH [ ELM Technology Corporation ]
