Single N-channel MOSFET
ELM13406CA-S
■General description
ELM13406CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=30V
Id=3.6A (Vgs=10V)
Rds(on) < 65mΩ (Vgs=10V)
Rds(on) < 105mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±
20
Unit
V
V
A
A
W
°C
Note
3.6
2.9
15
1.4
0.9
-55 to 150
1
2
1
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
70
100
63
Max.
90
125
80
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
G
S
1
2
3
4- 1