Single P-channel MOSFET
ELM13401CA-S
■General description
ELM13401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
•
Vds=-30V
Id=-4.2A (Vgs=-10V)
Rds(on) < 50mΩ (Vgs=-10V)
Rds(on) < 65mΩ (Vgs=-4.5V)
Rds(on) < 120mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±
12
-4.2
-3.5
-30
1.4
1.0
-55 to 150
Unit
V
V
A
A
W
°C
1
2
1
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
65
85
43
Max.
90
125
60
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
G
S
1
2
3
4- 1
ELM-TECH [ ELM Technology Corporation ]
