30
10V
25
20
6V
5V
4.5V
20
16
12
8
125°C
4
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs (Volts)
Figure 2: Transfer Characteristics
Vds=5V
4V
Id (A)
15
3.5V
10
5
0
Vgs=3V
60
Id (A)
1.7
Normalized On-Resistance
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0
50
Id=6.9
Vgs=10V
Rds(on) (m
:
)
40
30
20
Vgs=4.5V
Vgs=4.5V
Vgs=10V
10
0
5
10
15
20
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
70
60
1.0E+01
Id=6.9
Is Amps
1.0E+00
125°C
Rds(on) (m
:
)
50
40
30
20
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
1.0E-01
25°C
1.0E-02
FET + Schottky
1.0E-03
0.0
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body diode with parallel Schottky
characteristics
(Note F)
ELM-TECH [ ELM Technology Corporation ]
