5
4
Vds=15V
I
d
=8.5A
1400
1200
Capacitance (pF)
1000
C
iss
800
600
400
200
C
oss
C
rss
V
gs
(Volts)
3
2
1
0
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
R
ds(on)
limited
100Ps
1ms
T
j(max)
=150°C
T
a
=25°C
50
40
Tj
(max)
=150°C
T
a
=25°C
Power (W)
DC
Id (Amps)
10.0
10ms
0.1s
1.0
1s
10s
30
20
10
0
0.001
0.1
0.1
1
V
ds
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=Ta+P
dm
.Z
Tja
.R
Tja
R
Tja
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
