50
45
40
35
10V
6V
7V
5V
30
25
20
Vds=5V
Id (A)
30
25
20
15
10
5
0
0
1
2
Id(A)
15
125°C
10
3.5V
V
gs
=3V
5
0
25°C
3
4
5
2
2.5
3
3.5
4
4.5
5
5.5
V
ds
(Volts)
Fig 1: On-Region Characteristics
45
1.8
Vgs(Volts)
Figure 2: Transfer Characteristics
Normalized On-Resistance
40
35
V
gs
=4.5V
1.6
1.4
I
d
=10A
Vgs=10V
Rds
(on)
(m
:
)
30
25
20
15
10
5
0
5
10
15
V
gs
=20V
V
gs
=10V
Vgs=20V
1.2
1
0.8
20
25
30
0
25
50
75
100
125
150
175
I
d
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
50
40
30
125°C
20
10
0
0
5
10
15
20
V
gs
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
d
=10A
1.0E+01
1.0E+00
1.0E-01
Rds
(on)
(m
:
)
Is (A)
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
sd
(Volts)
Figure 6: Body-Diode Characteristics
ELM-TECH [ ELM Technology Corporation ]
