10
8
V
ds
=15V
I
d
=11A
1500
1250
Capacitance (pF)
C
iss
1000
750
500
250
0
C
rss
0
5
10
15
20
25
30
V
gs
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
C
oss
V
ds
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
ds(on)
limited
100Ps
1ms
10ms
0.1s
1.0
T
j(max)
=150°C
T
a
=25°C
0.1
0.1
1
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1s
10s
DC
10Ps
50
40
800
140
80
0.5
15
7
220
140
T
j(max)
=150°C
T
a
=25°C
Power (W)
Id (Amps)
10.0
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
HIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
OMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSP
d
DOES NOT ASSUME ANY LIABILITY ARISIN
0.1
UT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
UNCTIONS AND RELIABILITY WITHOUT NOTICE
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
