10
Vds=-40V
Id=-6A
1000
C
iss
800
8
Capacitance (pF)
-Vgs (Volts)
6
600
4
400
C
oss
C
rss
2
200
0
0
3
6
9
12
15
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
Tj(max)=150°C, Ta=25°C
Rds(on)
limited
0
0
10
20
30
40
-Vds (Volts)
Figure 8: Capacitance Characteristics
40
Tj(max)=150°C
Ta=25°C
30
1ms
10ms
-Id (Amps)
Power (W)
10.0
100Ps
10Ps
20
1.0
1s
10s
DC
0.1s
10
0.1
0.1
1
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=Ton/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
