10
8
Vds=15V
Id=7.5A
1000
800
6
4
2
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Capacitance (pF)
C
iss
600
400
C
oss
200
C
rss
0
0
5
10
15
20
25
30
Vds (Volts)
Figure 8: Capacitance Characteristics
Vgs (Volts)
100.0
Rds(on)
limited
50
40
10Ps
1ms
V
GS
=10V, V
DS
=15V, I
D
=7.4A
100Ps
Tj(max.)=150°C
Ta=25°C
10.0
Id (Amps)
Power (W)
10ms
0.1s
1.0
Tj(max.)=150°C
Ta=25°C
0.1
0.1
1
1s
GS
=10V,
V
10s
DC
10
I
F
=7.4A,
Vds (Volts)
30
20
10
0
0.001
V
DS
=15V, R
L
=2.0:, R
GEN
=3:
I
F
=7.4A, dI/dt=100A/Ps
100
0.01
0.1
1
10
100
1000
dI/dt=100A/Ps
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
