Single N-channel MOSFET
ELM16402EA-S
■General description
ELM16402EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=30V
Id=6.9A (Vgs=10V)
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±
20
Unit
V
V
A
A
W
°C
Note
6.9
5.8
20
2.00
1.44
-55 to 150
1
2
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
48.0
74.0
35.0
Max.
62.5
110.0
40.0
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-26(TOP VIEW)
6
■Circuit
D
5
4
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
G
S
1
2
3
4- 1