Single P-channel MOSFET
ELM16401EA-S
■General description
ELM16401EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V.
■Features
•
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 49mΩ (Vgs=-10V)
Rds(on) < 64mΩ (Vgs=-4.5V)
Rds(on) < 119mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±
12
-5.0
-4.2
-30
2.00
1.44
-55 to 150
Unit
V
V
A
A
W
°C
1
2
1
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
47.5
74.0
37.0
Max.
62.5
110.0
50.0
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-26(TOP VIEW)
6
5
■Circuit
D
4
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
G
S
1
2
3
4- 1