Single N-channel MOSFET
ELM16400EA-S
5
4
Vds=15V
Id=6.9A
1400
1200
Capacitance (pF)
1000
800
600
400
200
C
oss
C
rss
Vgs (Volts)
3
2
1
0
0
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
12
C
iss
0
0
25
Vds
15
(Volts)
20
Figure 8: Capacitance Characteristics
5
10
30
100.0
Rds(on)
10.0
limited
Tj(max)=150°C
Ta=25°C
40
30
Tj(max)=150°C
Ta=25°C
Id (Amps)
1ms
0.1s
Power (W)
100�½s
20
10
1.0
10ms
1s
10s
DC
0.1
0.1
1
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
�½
ja
Normalized Transient
Thermal Resistance
D=Ton/T
T
j,pk
=Ta+P
dm
.Z
�½ja
.R
�½ja
R
�½ja
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
Ton
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
ELM-TECH [ ELM Technology Corporation ]
