Single N-channel MOSFET
ELM16408EA-S
■General description
ELM16408EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection is included.
■Features
•
•
•
•
•
•
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Vds=20V
Id=8.8A (Vgs=10V)
Rds(on) < 18mΩ (Vgs=10V)
Rds(on) < 20mΩ (Vgs=4.5V)
Rds(on) < 25mΩ (Vgs=2.5V)
Rds(on) < 32mΩ (Vgs=1.8V)
ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
20
±
12
8.8
7.0
40
2.00
1.28
-55 to 150
Unit
V
V
A
A
W
°C
1
2
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
Typ.
47.5
74.0
37.0
Max.
62.5
110.0
40.0
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SOT-26(TOP VIEW)
6
■Circuit
D
5
4
Pin No.
1
2
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
S
G
1
2
3
3
4
5
6
4- 1