5
4
Vds=-10V
Id=-1.0A
800
3
Capacitance (pF)
600
C
iss
-Vgs (Volts)
400
2
1
0
0
2
4
6
8
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
200
C
rss
C
oss
0
0
5
10
15
20
-Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
Tj(max)=150°C
Ta=25°C
100Ps
12
10
Tj(max)=150°C
Ta=25°C
-Id (Amps)
10Ps
Rds(on)
limited
1.0
1s
10s
0.1
0.1
1
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
DC
0.1s
1ms
10ms
Power (W)
10.0
8
6
4
2
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
1
D=Ton/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=360°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.00001
Pd
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
