Single N-channel MOSFET
ELM17402FA-S
■General description
ELM17402FA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V.
■Features
•
•
•
•
•
Vds=20V
Id=1.6A (Vgs=4.5V)
Rds(on) < 90mΩ (Vgs=4.5V)
Rds(on) < 105mΩ (Vgs=2.5V)
Rds(on) < 130mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
20
±8
1.6
1.2
10
0.35
0.22
-55 to 150
Unit
V
V
A
A
W
°C
1
2
1
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
300
340
280
Max.
360
425
320
Unit
°C/W
°C/W
°C/W
Note
1
3
■Pin configuration
SC-70(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
G
S
1
2
3
4- 1