Dual P-channel MOSFET
ELM18807BA-S
■General description
ELM18807BA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge. Internal
ESD protection is included.
■Features
•
•
•
•
•
•
Vds=-12V
• ESD Protected
Id=-6.5A (Vgs=-4.5V)
Rds(on) < 20mΩ (Vgs=-4.5V)
Rds(on) < 24mΩ (Vgs=-2.5V)
Rds(on) < 30mΩ (Vgs=-1.8V)
Rds(on) < 36mΩ (Vgs=-1.5V)
Limit
-12
±8
-6.5
-5.0
-60
1.4
0.9
-55 to 150
Unit
V
V
A
A
W
°C
3
2
Note
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
73
96
63
Max.
90
125
75
Unit
°C/W
°C/W
°C/W
Note
1
1, 4
■Pin configuration
TSSOP-8(TOP VIEW)
1
2
3
4
8
7
6
5
Pin No.
1
2
3
4
D1
Pin name
DRAIN1
SOURCE1
SOURCE1
GATE1
Pin No.
5
6
7
8
D2
Pin name
GATE2
SOURCE2
SOURCE2
DRAIN2
■Circuit
G1
Rg
G2
Rg
S1
S2
4- 1