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ELM18807BA-S 参数 Datasheet PDF下载

ELM18807BA-S图片预览
型号: ELM18807BA-S
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道MOSFET [Dual P-channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 389 K
品牌: ELM-TECH [ ELM Technology Corporation ]
 浏览型号ELM18807BA-S的Datasheet PDF文件第2页浏览型号ELM18807BA-S的Datasheet PDF文件第3页浏览型号ELM18807BA-S的Datasheet PDF文件第4页 
Dual P-channel MOSFET
ELM18807BA-S
■General description
ELM18807BA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge. Internal
ESD protection is included.
■Features
Vds=-12V
• ESD Protected
Id=-6.5A (Vgs=-4.5V)
Rds(on) < 20mΩ (Vgs=-4.5V)
Rds(on) < 24mΩ (Vgs=-2.5V)
Rds(on) < 30mΩ (Vgs=-1.8V)
Rds(on) < 36mΩ (Vgs=-1.5V)
Limit
-12
±8
-6.5
-5.0
-60
1.4
0.9
-55 to 150
Unit
V
V
A
A
W
°C
3
2
Note
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Symbol
Rθja
Rθjl
Typ.
73
96
63
Max.
90
125
75
Unit
°C/W
°C/W
°C/W
Note
1
1, 4
■Pin configuration
TSSOP-8(TOP VIEW)
1
2
3
4
8
7
6
5
Pin No.
1
2
3
4
D1
Pin name
DRAIN1
SOURCE1
SOURCE1
GATE1
Pin No.
5
6
7
8
D2
Pin name
GATE2
SOURCE2
SOURCE2
DRAIN2
■Circuit
G1
Rg
G2
Rg
S1
S2
4- 1