5
Vds=10V
4
2000
Id
=7.5A
Capacitance (pF
)
1600
1200
800
C
rss
400
0
C
iss
Vgs(Volt
s)
3
2
1
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
C
oss
0
5
10
15
20
Vds(Volts)
Figure 8: Capacitance Characteristics
100.0
Tj(max)=150°C
Ta=25°C
Rds(on)
limited
10Ps
100Ps
1ms
0.1s
10ms
40
Tj(max)=150°C
Ta=25°C
30
Power (W)
Id (Amps)
10.0
20
1.0
1s
10s
DC
0.1
0.1
1
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
Tja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=T
a
+P
dm
.Z
Tja
.R
Tja
R
Tja
=83°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd
0.1
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ELM-TECH [ ELM Technology Corporation ]
