Single N-channel MOSFET
ELM32434LA-S
■General description
ELM32434LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=600V
• Id=2A
• Rds(on) < 4.4Ω (Vgs=10V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
L=10mH
Ta=25°C
Ta=100°C
Ta=25°C
Ta=100°C
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Limit
600
±
30
Unit
V
V
A
A
A
mJ
W
°C
Note
2.0
1.1
7
2.4
29
50
20
-55 to 150
4
3, 4
5
5
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Rθjc
Rθja
Typ.
Max.
2.5
62.5
Unit
°C/W
°C/W
Note
■Pin configuration
TO-252-3(TOP VIEW)
TAB
■Circuit
D
Pin No.
1
2
1
3
Pin name
GATE
DRAIN
SOURCE
G
S
2
3
6- 1