Single P-channel MOSFET
ELM32403LA-S
■General description
ELM32403LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=-40V
Id=-8A
Rds(on) < 55mΩ (Vgs=-10V)
Rds(on) < 94mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-40
±
20
Unit
V
V
A
A
W
°C
Note
-8
-6
-32
28
18
-55 to 150
3
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
Typ.
Max.
3
75
Unit
°C/W
°C/W
Note
■Pin configuration
TO-252-3(TOP VIEW)
TAB
■Circuit
D
Pin No.
1
2
1
3
Pin name
GATE
DRAIN
SOURCE
2
3
G
S
4- 1