Single N-channel MOSFET
ELM33414CA-S
■General description
ELM33414CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 3.5V and internal
ESD protection is included.
■Features
•
•
•
•
•
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Vds=60V
Id=300mA
Rds(on) < 2Ω (Vgs=10V)
Rds(on) < 3Ω (Vgs=4.5V)
Rds(on) < 5Ω (Vgs=3.5V)
ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Ta=25°C
Ta=100°C
Junction and storage temperature range
Power dissipation
Ta=25°C
Ta=100°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
60
±20
300
190
1
0.35
0.14
-40 to 150
Unit
V
V
mA
A
W
°C
3
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Typ.
Max.
350
Unit
°C/W
Note
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
Pin name
GATE
SOURCE
DRAIN
S
G
1
2
3
4- 1