Single P-channel MOSFET
ELM33413CA-S
■General description
ELM33413CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
•
Vds=-30V
Id=-4A
Rds(on) < 64mΩ (Vgs=-4.5V)
Rds(on) < 80mΩ (Vgs=-2.5V)
Rds(on) < 120mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±
12
-4.0
-3.0
-20
1.25
0.80
-55 to 150
Unit
V
V
A
A
W
°C
3
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
Typ.
75
Max.
100
Unit
°C/W
Note
■Pin configuration
SOT-23(TOP VIEW)
3
■Circuit
D
Pin No.
1
2
2
Pin name
GATE
SOURCE
DRAIN
1
3
G
S
4-1