Single P-channel MOSFET
ELM34413AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
tf
Vgs=-10V, Vds=-15V
Id=-12A
Vgs=-10V, Vds=-15V
3450
1000
414
34.5
10.3
12.6
13.8
18.4
57.5
115.0
48.3
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
2
2
2
2
2
2
2
Symbol
Condition
Min.
-30
-1
-10
±
100
Ta=25°C
Typ. Max. Unit Note
V
μA
nA
V
A
10
15
29
-1.2
-2.1
-4
12
19
mΩ
mΩ
S
V
A
A
1
1
1
1
3
BVdss Id=-250μA, Vgs=0V
Idss
Igss
Vds=-24V, Vgs=0V
Vds=-20V, Vgs=0V, Tj=125°C
Vds=0V, Vgs=
±
25V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Rds(on)
Gfs
Vsd
Is
Ism
Vgs=-10V, Id=-12A
Vgs=-4.5V, Id=-9A
Vds=-10V, Id=-12A
Is=If, Vgs=0V
-1.0
-50
-1.5
-3.0
td(off) Id≈-1A, Rgen=6Ω
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
ELM-TECH [ ELM Technology Corporation ]
