Complementary MOSFET
ELM34603AA-N
■General Description
ELM34603AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
•
•
•
•
N-channel
Vds=30V
Id=7A
Rds(on) < 27.5mΩ(Vgs=10V)
Rds(on) < 40mΩ(Vgs=4.5V)
P-channel
Vds=-30V
Id=-6A
Rds(on) < 34mΩ(Vgs=-10V)
Rds(on) < 56mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
N-ch (Max.)
30
±20
7
6
20
2.0
1.3
-55 to 150
P-ch (Max.)
-30
±20
-6
-5
-20
2.0
1.3
-55 to 150
Unit Note
V
V
A
A
W
°C
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
Rθja
Rθja
Device
N-ch
P-ch
Typ.
Max.
62.5
62.5
Unit
°C/W
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
G1
S1
• N-ch
D1
• P-ch
D2
8
7
6
5
G2
S2
7-1