Single N-channel MOSFET
ELM34414AA-N
■General description
ELM34414AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=30V
Id=15A
Rds(on) < 8mΩ (Vgs=10V)
Rds(on) < 12mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=90°C
Ta=25°C
Ta=90°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±
20
Unit
V
V
A
A
W
°C
Note
15
12
50
2.5
2.0
-55 to 150
3
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
Typ.
Max.
50
Unit
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
8
7
6
5
5- 1
ELM-TECH [ ELM Technology Corporation ]
