Single P-channel MOSFET
ELM34411AA-N
■General description
ELM34411AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=-30V
Id=-12A
Rds(on) < 14mΩ (Vgs=-10V)
Rds(on) < 22mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±
25
Unit
V
V
A
A
W
°C
Note
-12
-9
-50
2.5
1.3
-55 to 150
3
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
Typ.
Max.
25
50
Unit
°C/W
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
8
7
6
5
4- 1