Single N-channel MOSFET
ELM34406AA-N
■General description
ELM34406AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=40V
Id=7.5A
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Ta=25°C
Ta=100°C
Junction and storage temperature range
Power dissipation
Ta=25°C
Ta=100°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
40
±
20
Unit
V
V
A
A
W
°C
Note
7.5
6.5
20
2.5
1.3
-55 to 150
3
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
Typ.
Max.
50
Unit
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
8
7
6
5
4- 1