On-Region Characteristics.
10
I
D
,Drain-Source Current(A)
V
GS
=10V
4.5V
3.0V
2.5V
R
DS(ON)
, Normalized
Drain-Source on-Resistance
On-Resistance Variation With Drain
Current and Gate Voltage.
2.4
2.2
2
1.8
1.6
1.4
3.5V
1.2
1
0.8
0
2
4
6
I
D
,Drain Current(A)
10V
8
10
4.5V
V
GS
=2.0V
2.5V
3.0V
8
6
2.0V
4
2
1.5V
0
0
1
2
3
4
V
DS
,Drain-Source Voltage(V)
R
DS(ON)
,Normalized Drain-Source
On-Resistance
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
On-Resistance Variation
With Temperature.
I
D
=3A
V
DS
=4.5V
On-Resistance Variation vs. Gate-Source Voltage.
0.20
I
D
=2A
0.15
R
DS(ON)
(OHM)
0.10
125°C
25°C
0.05
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
,Junction Temperature(°C)
V
GS
,Gate to Source Voltage(V)
I
s
, Reverse Drain Current (A)
Transfer Characteristics.
10
V
DS
=5V
8
I
D
,Drain Current(A)
Body Diode Forword Voltage Variation with
Source Current and Temperature.
10
V
GS
= 0V
T
A
=55°C
25°C
125°C
1
T
A
= 125°C
25°C
-55°C
6
4
2
0
0
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
V
SD
, Body Diode Forward Voltage(V)
V
GS
,Gate To Source Voltage(V)
ELM-TECH [ ELM Technology Corporation ]
