Dual N-channel MOSFET
ELM38800BA-S
■General description
ELM38800BA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
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Vds=20V
Id=6.3A
Rds(on) < 22mΩ (Vgs=4.5V)
Rds(on) < 26mΩ (Vgs=2.5V)
Rds(on) < 34mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
Junction and storage temperature range
L=0.1mH
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Limit
20
±12
6.3
5.0
50
22
23
1.4
0.9
-55 to 150
Unit
V
V
A
A
A
mJ
W
°C
4
3, 4
Note
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Typ.
Max.
90
Unit
°C/W
Note
5
■Pin configuration
TSSOP-8(TOP VIEW)
1
2
3
4
8
7
6
5
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
GATE1
SOURCE1
SOURCE1
DRAIN1
DRAIN2
SOURCE2
SOURCE2
GATE2
G1
S1
D1
D2
G2
S2
4- 1