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EDD5108ADTA-6BL-E 参数 Datasheet PDF下载

EDD5108ADTA-6BL-E图片预览
型号: EDD5108ADTA-6BL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M比特DDR SDRAM [512M bits DDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 49 页 / 549 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E
-6B
Parameter
Mode register set command cycle
time
Active to Active/Auto refresh
command period
Auto refresh to Active/Auto refresh
command period
Active to Read/Write delay
Symbol
min.
2.2
2
42
60
72
18
18
tRCD min.
12
15
(tWR/tCK)+
(tRP/tCK)
1
7.8
max.
120000
-7A
min.
2.2
2
45
65
75
20
20
tRCD min.
15
15
max
120000
-7B
min.
2.2
2
45
65
75
20
20
tRCD min.
15
15
max.
120000
Unit Notes
ns
tCK
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
µs
13
7
Address and control input pulse width tIPW
tMRD
Active to Precharge command period tRAS
tRC
tRFC
tRCD
Precharge to active command period tRP
Active to Autoprecharge delay
Active to active command period
Write recovery time
Auto precharge write recovery and
precharge time
Internal write to Read command
delay
Average periodic refresh interval
tRAP
tRRD
tWR
tDAL
tWTR
tREF
(tWR/tCK)+
(tRP/tCK)
1
7.8
(tWR/tCK)+
(tRP/tCK)
1
7.8
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
definitions, see ‘Timing Waveforms’ section.
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
transition is defined to occur when the signal level crossing VTT.
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
reference voltage to judge this transition is not given.
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
assured.
11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these
values are 10% of tCK.
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
0.4V/400 cycle.
13. tDAL = (tWR/tCK)+(tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)
tDAL = 5 clocks
Preliminary Data Sheet E0501E10 (Ver. 1.0)
7