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EDD51163DBH-5BLS-F 参数 Datasheet PDF下载

EDD51163DBH-5BLS-F图片预览
型号: EDD51163DBH-5BLS-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M DDR位移动RAM ™ WTR (宽温度范围) ,低功耗功能 [512M bits DDR Mobile RAM™ WTR (Wide Temperature Range), Low Power Function]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 60 页 / 759 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD51163DBH-LS
Advanced Data Retention Current
(TA =
−25°C
to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)
Parameter
Advanced data retention current
(Self-refresh current)
PASR="000" (Full)
PASR="001" (2BK)
PASR="010" (1BK)
PASR="000" (Full)
PASR="001" (2BK)
PASR="010" (1BK)
PASR="000" (Full)
PASR="001" (2BK)
PASR="010" (1BK)
IDD6
IDD6
Symbol
IDD6
typ.
max.
250
220
200
420
300
230
500
350
250
Unit
µA
µA
µA
µA
µA
µA
µA
µA
µA
+70°C < TJ
+85°C
CKE = L
+40°C < TJ
+70°C
CKE = L
Condition
−25°C ≤
TJ
+40°C
CKE = L
Notes
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by Test Conditions.
3. Definitions for IDD:
L is defined as VIN
0.1
×
VDDQ;
H is defined as VIN
0.9
×
VDDQ;
STABLE is defined as inputs stable at an H or L level;
SWITCHING is defined as:
Address and command: inputs changing between H and L once per two clock cycles;
Data bus inputs: DQ changing between H and L once per clock cycle; DM and DQS are STABLE.
DC Characteristics 2 (TA =
−25°C
to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
−2.0
−1.5
0.9
×
VDDQ
max.
2.0
1.5
0.1
×
VDDQ
Unit
µA
µA
V
V
Test condition
0
VIN
VDDQ
0
VOUT
VDDQ,
DQ = disable
IOH =
0.1mA
IOL = 0.1mA
Notes
Pin Capacitance (TA = +25°C, VDD and VDDQ = 1.7V to 1.95V)
Parameter
Input capacitance
Symbol
CI1
CI2
Delta input capacitance
Cdi1
Cdi2
Data input/output capacitance
Delta input/output capacitance
CI/O
Cdio
Pins
CK, /CK
All other input-only pins
CK, /CK
All other input-only pins
DQ, DM, DQS
DQ, DM, DQS
min.
1.5
1.5
2.0
typ.
max.
4.0
4.0
0.25
1.0
5.0
1.0
Unit
pF
pF
pF
pF
pF
pF
Notes
1
1
1
1
1, 2
1
Notes: 1. These parameters are measured on conditions:
TA = +25°C.
2. DOUT circuits are disabled.
f = 100MHz, VOUT = VDDQ/2,
∆VOUT
= 0.2V,
Preliminary Data Sheet E1433E30 (Ver. 3.0)
7