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EDE1104ACSE-5C-E 参数 Datasheet PDF下载

EDE1104ACSE-5C-E图片预览
型号: EDE1104ACSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 82 页 / 782 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1104ACSE, EDE1108ACSE, EDE1116ACSE
max.
Parameter
Symbol
Grade
-8E
-6E
-5C
×
4
290
280
270
×
8
290
280
270
×
16
290
280
270
Unit
Test condition
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self-Refresh Mode;
CK and /CK at 0V;
CKE
0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD)
−1
×
tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD),
tFAW = tFAW (IDD), tRCD = 1
×
tCK (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Auto-refresh current
IDD5
mA
Self-refresh current
IDD6
-8E
-6E
-5C
10
10
10
10
10
10
10
10
10
mA
Operating current
(Bank interleaving)
IDD7
-8E
-6E
-5C
290
275
260
290
275
260
350
310
290
mA
Notes: 1.
2.
3.
4.
IDD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC Input Test Condition.
IDD parameters are specified with ODT disabled.
Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS. IDD values must be met with all
combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN
VIL (AC) (max.)
H is defined as VIN
VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
Data Sheet E0975E50 (Ver.5.0)
9