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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG
AC Overshoot/Undershoot Specification
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-800
DDR2-667
Maximum undershoot area below VSS
DDR2-800
DDR2-667
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDD
DDR2-800, 667
Maximum undershoot area below VSS
DDR2-800, 667
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDDQ
DDR2-800, 667
Maximum undershoot area below VSSQ
DDR2-800, 667
DQ, DQS, /DQS,
RDQS, /RDQS, DM
CK, /CK
Pins
Command, Address,
CKE, ODT
Specification
0.5
0.5
0.66
0.8
0.66
0.8
0.5
0.5
0.23
0.23
0.5
0.5
0.23
0.23
Unit
V
V
V-ns
V-ns
V-ns
V-ns
V
V
V-ns
V-ns
V
V
V-ns
V-ns
Maximum amplitude
Overshoot area
Volts (V)
VDD, VDDQ
VSS, VSSQ
Undershoot area
Time (ns)
Overshoot/Undershoot Definition
Preliminary Data Sheet E1430E20 (Ver. 2.0)
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