欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDE2508ABSE-6C-E 参数 Datasheet PDF下载

EDE2508ABSE-6C-E图片预览
型号: EDE2508ABSE-6C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位DDR2 SDRAM [256M bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 66 页 / 680 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第9页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第10页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第11页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第12页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第14页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第15页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第16页浏览型号EDE2508ABSE-6C-E的Datasheet PDF文件第17页  
EDE2508ABSE, EDE2516ABSE
-6C, -6E
Frequency (Mbps)
Parameter
Read postamble
Active to precharge command
Active to auto-precharge delay
Active bank A to active bank B
command period
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command delay
Internal read to precharge command
delay
Symbol
tRPST
tRAS
tRAP
tRRD
tWR
tDAL
tWTR
tRTP
667
min.
0.4
45
tRCD min.
7.5
15
max.
0.6
70000
-5C
533
min.
0.4
45
tRCD min.
7.5
15
max.
0.6
70000
Unit
tCK
ns
ns
ns
ns
tCK
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
ns
ns
µs
µs
ns
3
2, 3
1
Notes
(tWR/tCK)
+
(tRP/tCK)
7.5
7.5
tRFC
+
10
200
2
2
7
AL
3
0
75
tIS
+
tCK
+
tIH
12
7.8
3.9
(tWR/tCK)
+
(tRP/tCK)
7.5
7.5
tRFC
+
10
200
2
2
6
AL
3
0
75
tIS
+
tCK
+
tIH
12
7.8
3.9
Exit self refresh to a non-read command tXSNR
Exit self refresh to a read command
Exit precharge power down to any non-
read command
Exit active power down to read
command
Exit active power down to read
command
(slow exit/low power mode)
CKE minimum pulse width (high and
low pulse width)
Output impedance test driver delay
Auto refresh to active/auto refresh
command time
Average periodic refresh interval
(0°C
TC
+85°C)
(+85°C
<
TC
+95°C)
Minimum time clocks remains ON after
CKE asynchronously drops low
tXSRD
tXP
tXARD
tXARDS
tCKE
tOIT
tRFC
tREFI
tREFI
tDELAY
Notes: 1.
2.
3.
4.
For each of the terms above, if not already an integer, round to the next higher integer.
AL: Additive Latency.
MRS A12 bit defines which active power down exit timing to be applied.
The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test.
DQS
/DQS
CK
/CK
tDS
tDH
tDS
tDH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
tIS
tIH
tIS
tIH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
Preliminary Data Sheet E0573E30 (Ver. 3.0)
13