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EDE2516ABSE-6E-E 参数 Datasheet PDF下载

EDE2516ABSE-6E-E图片预览
型号: EDE2516ABSE-6E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位DDR2 SDRAM [256M bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 66 页 / 680 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE2508ABSE, EDE2516ABSE  
max.  
Parameter  
Symbol  
IDD5  
Grade  
× 8  
× 16  
Unit  
mA  
Test condition  
tCK = tCK (IDD);  
-6C, -6E 120  
120  
Refresh command at every tRFC (IDD) interval;  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Auto-refresh current  
-5C  
115  
6
115  
6
Self Refresh Mode;  
CK and /CK at 0V;  
CKE 0.2V;  
Other control and address bus inputs are FLOATING;  
Data bus inputs are FLOATING  
Self-refresh  
current  
IDD6  
IDD7  
mA  
mA  
all bank interleaving reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = tRCD (IDD) 1 × tCK  
(IDD);  
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),  
tRCD = 1 × tCK (IDD);  
CKE is H, CS is H between valid commands;  
Address bus inputs are STABLE during DESELECTs;  
Data pattern is same as IDD4W;  
-6C, -6E 190  
210  
190  
Operating current  
(Bank interleaving)  
5C  
180  
Notes: 1. IDD specifications are tested after the device is properly initialized.  
2. Input slew rate is specified by AC Input Test Condition.  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD  
values must be met with all combinations of EMRS bits 10 and 11.  
5. Definitions for IDD  
L is defined as VIN VIL (AC) (max.)  
H is defined as VIN VIH (AC) (min.)  
STABLE is defined as inputs stable at an H or L level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between H and L every other clock cycle (once per two clocks) for address and control  
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals  
not including masks or strobes.  
6. Refer to AC Timing for IDD Test Conditions.  
AC Timing for IDD Test Conditions  
For purposes of IDD testing, the following parameters are to be utilized.  
DDR2-667  
DDR2-533  
Parameter  
4-4-4  
4
5-5-5  
5
4-4-4  
4
CL(IDD)  
tRCD(IDD)  
tRC(IDD)  
12  
15  
15  
57  
60  
60  
tRRD(IDD) × 8  
tCK(IDD)  
7.5  
3
7.5  
3
7.5  
3.75  
45  
tRAS(min.)(IDD)  
tRAS(max.)(IDD)  
tRP(IDD)  
45  
45  
70000  
12  
70000  
15  
70000  
15  
tRFC(IDD)  
75  
75  
75  
Preliminary Data Sheet E0573E30 (Ver. 3.0)  
8