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EDE2508AASE-4C-E 参数 Datasheet PDF下载

EDE2508AASE-4C-E图片预览
型号: EDE2508AASE-4C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位DDR2 SDRAM [256M bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 66 页 / 673 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE2504AASE, EDE2508AASE, EDE2516AASE
Electrical Specifications
All voltages are referenced to VSS (GND)
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Power supply voltage
Power supply voltage for output
Power supply voltage for DLL
Input voltage
Output voltage
Storage temperature
Power dissipation
Short circuit output current
Symbol
VDD
VDDQ
VDDL
VIN
VOUT
Tstg
PD
IOUT
Rating
−1.0
to
+2.3
−0.5
to
+2.3
−0.5
to
+2.3
−0.5
to
+2.3
−0.5
to
+2.3
−55
to
+100
1.0
50
Unit
V
V
V
V
V
°C
W
mA
Note
1
1
1
1
1
1, 2
1
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature
Symbol
TC
Rating
0 to
+85
Unit
°C
Note
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The operation temperature range is the temperature where all DRAM specification will be supported. Out
side of this temperature range, even it is still within the limit of stress condition, some deviation on portion
of operation specification may be required.
During operation, the DRAM case temperature must be maintained between 0 to +85°C under all other
specification parameters.
Preliminary Data Sheet E0427E11 (Ver. 1.1)
5