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EDL5132CBMA-10-E 参数 Datasheet PDF下载

EDL5132CBMA-10-E图片预览
型号: EDL5132CBMA-10-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位的移动RAM MCP 2个256Mb的组件( 16M字× 32位) [512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)]
分类和应用:
文件页数/大小: 62 页 / 559 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET
512M bits Mobile RAM MCP
2 pcs of 256Mb components
EDL5132CBMA (16M words
×
32 bits)
Description
The EDL5132CBMA is a 512M bits Mobile RAM MCP
(Multi Chip Package) organized as 4,194,304 words
×
32 bits
×
4 banks, 2 pieces of 256M bits Mobile RAM in
one package. It is packaged in 90-ball FBGA.
Pin Configurations
/xxx indicates active low signal.
90-ball FBGA
1
2
3
4
5
6
7
8
9
A
Features
Low voltage power supply
VDD:
1.7V to 1.95V
VDDQ: 1.7V to 1.95V
Wide temperature range (−25°C to 85°C)
Programmable Partial Array Self Refresh
Programmable Driver Strength
Auto Temperature Compensated Self Refresh by
built-in temperature sensor.
Deep power down mode
Fully Synchronous Dynamic RAM, with all signals
referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every
cycle
Quad internal banks controlled by BA0 and BA1
Byte control by DQM
Wrap sequence = Sequential/ Interleave
/CAS latency (CL) = 2, 3
Automatic precharge and controlled precharge
Auto refresh and self refresh
• ×32
organization
8,192 refresh cycles/64ms
Burst termination by Burst stop command and
Precharge command
FBGA package with lead free solder (Sn-Ag-Cu)
B
C
DQ26 DQ24 VSS
DQ28 VDDQ VSSQ
VSSQ DQ27 DQ25
VDD DQ23 DQ21
VDDQ VSSQ DQ19
DQ22 DQ20 VDDQ
DQ17 DQ18 VDDQ
NC
A2
A10
NC
BA0
/CAS
VDD
DQ6
DQ1
DQ16 VSSQ
DQM2 VDD
A0
BA1
/CS
A1
A11
/RAS
D
VSSQ DQ29 DQ30
E
VDDQ DQ31
NC
A3
A6
A12
A9
NC
VSS
F
VSS DQM3
G
A4
A5
A8
CKE
NC
H
A7
J
CLK
K
DQM1
/WE DQM0
DQ7 VSSQ
DQ5 VDDQ
DQ3 VDDQ
L
VDDQ DQ8
M
VSSQ DQ10 DQ9
N
VSSQ DQ12 DQ14
P
DQ11 VDDQ VSSQ
VDDQ VSSQ DQ4
VDD
DQ0
DQ2
R
DQ13 DQ15 VSS
(Top view)
A0 to A12
BA0, BA1
DQ0 to DQ31
/CS
/RAS
/CAS
/WE
DQM0 to DQM3
CKE
CLK
VDD
VSS
VDDQ
VSSQ
NC
Address inputs
Bank select address
Data-input/output
Chip select
Row address strobe
Column address strobe
Write enable
DQ mask enable
Clock enable
Clock input
Power supply
Ground
Power supply for DQ
Ground for DQ
No connection
Document No. E0490E30 (Ver. 3.0)
Date Published September 2004 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2004