EDS1232AHTA
Relationship Between Frequency and Minimum Latency
Parameter
Frequency (MHz)
tCK (ns)
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge command
(same bank)
Precharge command to active command
(same bank)
Write recovery or data-in to precharge
command (same bank)
Active command to active command
(different bank)
Self-refresh exit time
Last data in to active command
(Auto precharge, same bank)
Self-refresh exit to command input
Precharge command to high impedance
(CL = 2)
(CL = 3)
Symbol
lRCD
lRC
lRAS
lRP
lDPL
lRRD
lSREX
lDAL
lSEC
lHZP
lHZP
-6B
166
6
3
10
7
3
2
2
1
5
10
⎯
3
1
⎯
–2
1
0
0
2
1
2
0
1
100
10
2
7
5
2
2
2
1
4
7
2
3
1
–1
–2
1
0
0
2
1
2
0
1
-75
133
7.5
3
9
6
3
2
2
1
5
9
⎯
3
1
⎯
–2
1
0
0
2
1
2
0
1
100
10
2
7
5
2
2
2
1
4
7
2
3
1
–1
–2
1
0
0
2
1
2
0
1
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
= [lRC]
3
Notes
1
1
1
1
1
1
2
Last data out to active command
lAPR
(Auto precharge, same bank)
Last data out to precharge (early precharge)
lEP
(CL = 2)
(CL = 3)
Column command to column command
Write command to data in latency
DQM to data in
DQM to data out
CKE to CLK disable
Register set to active command
/CS to command disable
Power-down exit to command input
lEP
lCCD
lWCD
lDID
lDOD
lCLE
lMRD
lCDD
lPEC
Notes: 1.
lRCD
to
lRRD
are recommended value.
2. Be valid [DESL] or [NOP] at next command of self-refresh exit.
3. Except [DESL] and [NOP]
Data Sheet E1163E30 (Ver. 3.0)
9
ELPIDA [ ELPIDA MEMORY ]
