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EDS2516APTA-7AL 参数 Datasheet PDF下载

EDS2516APTA-7AL图片预览
型号: EDS2516APTA-7AL
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 51 页 / 553 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS2504ACTA/08ACTA/16ACTA, EDS2504APTA/08APTA/16APTA  
Electrical Specifications  
Absolute Maximum Ratings  
Parameter  
Symbol  
VT  
Rating  
Unit  
V
Note  
Voltage on any pin relative to VSS  
Supply voltage relative to VSS  
Short circuit output current  
Power dissipation  
–0.5 to VDD + 0.5 (4.6 (max.))  
VDD  
IOS  
PD  
–0.5 to +4.6  
V
50  
mA  
W
1.0  
Operating temperature  
Storage temperature  
TA  
0 to +70  
–55 to +125  
°C  
°C  
Tstg  
Notes: 1. Respect to VSS.  
Caution  
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause  
permanent damage. The device is not meant to be operated under conditions outside the limits  
described in the operational section of this specification. Exposure to Absolute Maximum Rating  
conditions for extended periods may affect device reliability.  
Recommended Operating Conditions (TA = 0 to 70°C)  
Parameter  
Symbol  
VDD, VDDQ  
VSS, VSSQ  
VIH  
min.  
3.0  
0
max.  
Unit  
V
Notes  
1, 2  
3
Supply voltage  
3.6  
0
V
Input high voltage  
2.0  
–0.3  
VDD + 0.3  
0.8  
V
1, 4  
1, 5  
Input low voltage  
VIL  
V
Notes: 1. All voltage referred to VSS.  
2. The supply voltage with all VDDand VDDQ pins must be on the same level.  
3. The supply voltage with all VSS and VSSQ pins must be on the same level.  
4. VIH (max.) = VDD + 2.0 V for pulse width 3ns at VDD.  
5. VIL (min.) = VSS – 2.0 V for pulse width 3ns at VSS.  
Data Sheet E0110E30 (Ver. 3.0)  
4