欢迎访问ic37.com |
会员登录 免费注册
发布采购

EDS2516APTA-75-E 参数 Datasheet PDF下载

EDS2516APTA-75-E图片预览
型号: EDS2516APTA-75-E
PDF下载: 下载PDF文件 查看货源
内容描述: 256M位的SDRAM [256M bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 649 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDS2516APTA-75-E的Datasheet PDF文件第12页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第13页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第14页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第15页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第17页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第18页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第19页浏览型号EDS2516APTA-75-E的Datasheet PDF文件第20页  
EDS2516APTA  
Command Operation  
Command Truth Table  
The SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.  
CKE  
Function  
Symbol  
DESL  
NOP  
n – 1  
H
n
×
×
×
×
×
×
×
×
×
×
×
/CS  
H
L
/RAS  
×
/CAS  
×
/WE  
×
BA1,BA0 A10  
A0 to A12  
Device deselect  
No operation  
×
×
×
H
H
H
H
H
H
H
L
H
H
L
H
L
×
×
×
Burst stop  
BST  
H
L
×
×
×
Read  
READ  
READA  
WRIT  
WRITA  
ACT  
H
L
H
H
L
V
V
V
V
V
V
×
L
H
L
H
V
L
H
L
V
V
V
V
V
×
Read with auto precharge  
Write  
H
L
L
H
L
L
Write with auto precharge  
Bank activate  
H
L
L
L
H
L
H
H
H
L
H
L
Precharge select bank  
Precharge all banks  
Mode register set  
PRE  
H
L
L
PALL  
MRS  
H
L
L
L
×
H
L
L
L
L
V
Remark: H: VIH. L: VIL. ×: VIH or VIL. V: Valid address input.  
Device deselect command [DESL]  
When this command is set (/CS is High), the SDRAM ignore command input at the clock. However, the internal  
status is held.  
No operation [NOP]  
This command is not an execution command. However, the internal operations continue.  
Burst stop command [BST]  
This command can stop the current burst operation.  
Column address strobe and read command [READ]  
This command starts a read operation. In addition, the start address of burst read is determined by the column  
address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation,  
the output buffer becomes High-Z.  
Read with auto-precharge [READA]  
This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8.  
Column address strobe and write command [WRIT]  
This command starts a write operation. When the burst write mode is selected, the column address (see Address  
Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the  
single write mode is selected, data is only written to the location specified by the column address (see Address Pins  
Table in Pin Function) and the bank select address (BA0, BA1).  
Write with auto-precharge [WRITA]  
This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a  
single write operation.  
Data Sheet E0359E20 (Ver. 2.0)  
16