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EDS6432AFBH-6B-E 参数 Datasheet PDF下载

EDS6432AFBH-6B-E图片预览
型号: EDS6432AFBH-6B-E
PDF下载: 下载PDF文件 查看货源
内容描述: 64M位SDRAM (2M字× 32位)的 [64M bits SDRAM (2M words x 32 bits)]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 49 页 / 696 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDS6432AFBH, EDS6432CFBH
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) [EDS6432AF]
(TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [EDS6432CF]
[EDS6432AF]
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
–1
–1.5
2.4
max.
1
1.5
0.4
Unit
µA
µA
V
V
Test condition
0
VIN
VDD
0
VOUT
VDD, DQ = disable
IOH = –2 mA
IOL = 2 mA
Note
[EDS6432CF]
Parameter
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
min.
–1
–1.5
2.0
max.
1
1.5
0.4
Unit
µA
µA
V
V
Test condition
0
VIN
VDD
0
VOUT
VDD, DQ = disable
IOH = –1 mA
IOL = 1 mA
Note
Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V) [EDS6432AF]
(TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V) [EDS6432CF]
Parameter
Input capacitance
Symbol
CI1
CI2
Data input/output
capacitance
CI/O
Pins
CLK
Address, CKE, /CS,
/RAS, /CAS, /WE,
DQM
DQ
min.
1.5
1.5
3.0
typ.
max.
3.5
3.8
6.5
Unit
pF
pF
pF
Notes
1, 2, 4
1, 2, 4
1, 2, 3, 4
Notes: 1.
2.
3.
4.
Capacitance measured with Boonton Meter or effective capacitance measuring method.
Measurement condition: f = 1MHz, 1.4V(EDS6432AFBH) and 1.2V (EDS6432CFBH) bias, 200mV swing.
DQM = VIH to disable DOUT.
This parameter is sampled and not 100% tested.
Data Sheet E0497E20 (Ver. 2.0)
6