HB52F648EN-75B 参数 Datasheet PDF下载

HB52F648EN-75B,

HB52F649EN-75B

512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus

(HB52F648EN) 64-Mword

×

64-bit, 2-Bank Module

(16 pcs of 32 M

×

8 Components)

(HB52F649EN) 64-Mword

×

72-bit, 2-Bank Module

(18 pcs of 32 M

×

8 Components)

PC133 SDRAM

E0012H10 (1st edition)

(Previous ADE-203-1115A (Z))

Preliminary

Jan. 17, 2001

Description

The HB52F648EN, HB52F649EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

have been developed as an optimized main memory solution for 8-byte processor applications. They are

synchronous Dynamic RAM Module, mounted 256-Mbit SDRAMs (HM5225805BTT) sealed in TSOP

package, and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD). The HB52F648EN is organized

32M

×

64

×

2-bank mounted 16 pieces of 256-Mbit SDRAM. The HB52F649EN is organized 32M

×

72

×

2-bank mounted 18 pieces of 256-Mbit SDRAM. An outline of the products is 168-pin socket type

package (dual lead out). Therefore, they make high density mounting possible without surface mount

technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside

each TSOP on the module board.

Features

•

Fully compatible with : JEDEC standard outline 8-byte DIMM

•

168-pin socket type package (dual lead out)



Outline: 133.37 mm (Length)

×

34.925 mm (Height)

×

4.00 mm (Thickness)



Lead pitch: 1.27 mm

•

3.3 V power supply

•

Clock frequency: 133 MHz (max)

•

LVTTL interface

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Elpida Memory, Inc. regarding specification.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.